
Samsung Semiconductor, Inc.
Produit non:
K4B4G1646E-BYK000
Fabricant:
Forfait:
-
Lot:
-
Fiche technique:
-
Description:
DDR3-1600 4GB (256MX16)1.25NS CL
Quantité:
Livraison:

Paiement:
Minimum: 1 Multiples: 1
Qté
Prix unitaire
Prix Ext
224
$4.75
$1064
448
$4.5125
$2021.6
672
$4.4175
$2968.56
896
$4.3225
$3872.96
1120
$4.0375
$4522
Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

| DigiKey Programmable | Not Verified |
| Operating Temperature | 0°C ~ 95°C |
| Clock Frequency | 800 MHz |
| Memory Interface | Parallel |
| Memory Organization | 256M x 16 |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Memory Type | Volatile |
| Series | - |
| Memory Size | 4Gbit |
| Package / Case | 96-TFBGA |
| Voltage - Supply | 1.35V |
| Mfr | Samsung Semiconductor, Inc. |
| Package | Tray |
| Memory Format | DRAM |