IXTT3N200P3HV

IXYS

Produit non:

IXTT3N200P3HV

Fabricant:

Forfait:

TO-268HV (IXTT)

Lot:

Fiche technique:

Description:

MOSFET N-CH 2000V 3A TO268

Quantité:

Livraison:

Paiement:

En stock : 30

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1860 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8Ohm @ 1.5A, 10V
Supplier Device Package	TO-268HV (IXTT)
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	2000 V
Series	Polar P3™
Power Dissipation (Max)	520W (Tc)
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTT3