IXTT2N170D2

IXYS

Produit non:

IXTT2N170D2

Fabricant:

Forfait:

TO-268AA

Lot:

Fiche technique:

Description:

MOSFET N-CH 1700V 2A TO268

Quantité:

Livraison:

Paiement:

En stock : 33

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds	3650 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	6.5Ohm @ 1A, 0V
Supplier Device Package	TO-268AA
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	1700 V
Series	Depletion
Power Dissipation (Max)	568W (Tc)
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Tj)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	IXTT2