IXTQ120N20P

IXYS

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IXTQ120N20P

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Forfait:

TO-3P

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Description:

MOSFET N-CH 200V 120A TO3P

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En stock : 66

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	152 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	22mOhm @ 500mA, 10V
Supplier Device Package	TO-3P
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	Polar
Power Dissipation (Max)	714W (Tc)
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTQ120