IXTP08N100D2

IXYS

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IXTP08N100D2

Fabricant:

Forfait:

TO-220-3

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Description:

MOSFET N-CH 1000V 800MA TO220AB

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En stock : 672

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds	325 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.6 nC @ 5 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	21Ohm @ 400mA, 0V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	1000 V
Series	Depletion
Power Dissipation (Max)	60W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	800mA (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	IXTP08