IXTH6N100D2

IXYS

Produit non:

IXTH6N100D2

Fabricant:

Forfait:

TO-247 (IXTH)

Lot:

Fiche technique:

Description:

MOSFET N-CH 1000V 6A TO247

Quantité:

Livraison:

Paiement:

En stock : 673

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds	2650 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 5 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.2Ohm @ 3A, 0V
Supplier Device Package	TO-247 (IXTH)
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	1000 V
Series	Depletion
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Mfr	IXYS
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	IXTH6