IXTA76P10T

IXYS

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IXTA76P10T

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Forfait:

TO-263AA

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Description:

MOSFET P-CH 100V 76A TO263

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En stock : 1276

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	13700 pF @ 25 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	197 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	25mOhm @ 38A, 10V
Supplier Device Package	TO-263AA
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	TrenchP™
Power Dissipation (Max)	298W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	76A (Tc)
Mfr	IXYS
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXTA76