IXFP5N100P

IXYS

Produit non:

IXFP5N100P

Fabricant:

Forfait:

TO-220-3

Lot:

Fiche technique:

Description:

MOSFET N-CH 1000V 5A TO220AB

Quantité:

Livraison:

Paiement:

En stock : 41

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1830 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33.4 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.8Ohm @ 500mA, 10V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	6V @ 250µA
Drain to Source Voltage (Vdss)	1000 V
Series	HiPerFET™, Polar
Power Dissipation (Max)	250W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFP5N100