IXFB82N60P

IXYS

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IXFB82N60P

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Forfait:

PLUS264™

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Description:

MOSFET N-CH 600V 82A PLUS264

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En stock : 280

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	23000 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	240 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	75mOhm @ 41A, 10V
Supplier Device Package	PLUS264™
Vgs(th) (Max) @ Id	5V @ 8mA
Drain to Source Voltage (Vdss)	600 V
Series	HiPerFET™, Polar
Power Dissipation (Max)	1250W (Tc)
Package / Case	TO-264-3, TO-264AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	82A (Tc)
Mfr	IXYS
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFB82