IRFD220PBF

Vishay Siliconix

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IRFD220PBF

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Forfait:

4-HVMDIP

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Description:

MOSFET N-CH 200V 800MA 4DIP

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En stock : 4131

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	260 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	800mOhm @ 480mA, 10V
Supplier Device Package	4-HVMDIP
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	-
Power Dissipation (Max)	1W (Ta)
Package / Case	4-DIP (0.300", 7.62mm)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IRFD220