IRF640PBF

Vishay Siliconix

Produit non:

IRF640PBF

Fabricant:

Forfait:

TO-220AB

Lot:

Fiche technique:

Description:

MOSFET N-CH 200V 18A TO220AB

Quantité:

Livraison:

Paiement:

En stock : 1260

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	-
Power Dissipation (Max)	125W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IRF640