HUF75339P3

Harris Corporation

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HUF75339P3

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Forfait:

TO-220-3

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Description:

MOSFET N-CH 55V 75A TO220-3

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En stock : 19374

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 20 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	12mOhm @ 75A, 10V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	55 V
Series	UltraFET™
Power Dissipation (Max)	200W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Mfr	Harris Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube