FQU20N06LTU

onsemi

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FQU20N06LTU

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I-PAK

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Description:

MOSFET N-CH 60V 17.2A IPAK

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En stock : 5040

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	630 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 5 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	60mOhm @ 8.6A, 10V
Supplier Device Package	I-PAK
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Series	QFET®
Power Dissipation (Max)	2.5W (Ta), 38W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17.2A (Tc)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tube
Base Product Number	FQU20N06