FQT4N25TF

onsemi

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FQT4N25TF

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Forfait:

SOT-223-4

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Description:

MOSFET N-CH 250V 830MA SOT223-4

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En stock : 2240

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.6 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	1.75Ohm @ 415mA, 10V
Supplier Device Package	SOT-223-4
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	250 V
Series	QFET®
Power Dissipation (Max)	2.5W (Tc)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	830mA (Tc)
Mfr	onsemi
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	FQT4N25