FQA24N60

onsemi

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FQA24N60

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TO-3PN

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Description:

MOSFET N-CH 600V 23.5A TO3PN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	145 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	240mOhm @ 11.8A, 10V
Supplier Device Package	TO-3PN
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	QFET®
Power Dissipation (Max)	310W (Tc)
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	23.5A (Tc)
Mfr	onsemi
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FQA24