FDS86140

onsemi

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FDS86140

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Forfait:

8-SOIC

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Description:

MOSFET N-CH 100V 11.2A 8SOIC

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En stock : 242

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2580 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9.8mOhm @ 11.2A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	PowerTrench®
Power Dissipation (Max)	2.5W (Ta), 5W (Tc)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.2A (Ta)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	FDS86