FDB86363-F085

onsemi

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FDB86363-F085

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D²PAK (TO-263)

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Description:

MOSFET N-CH 80V 110A D2PAK

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En stock : 22

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	10000 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Last Time Buy
Rds On (Max) @ Id, Vgs	2.4mOhm @ 80A, 10V
Supplier Device Package	D²PAK (TO-263)
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	80 V
Series	Automotive, AEC-Q101, PowerTrench®
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	FDB86363