FCP165N65S3

onsemi

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FCP165N65S3

Fabricant:

Forfait:

TO-220-3

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Description:

MOSFET N-CH 650V 19A TO220-3

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En stock : 731

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Through Hole
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	165mOhm @ 9.5A, 10V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	4.5V @ 1.9mA
Drain to Source Voltage (Vdss)	650 V
Series	SuperFET® III
Power Dissipation (Max)	154W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Mfr	onsemi
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FCP165