FCH76N60N

Fairchild Semiconductor

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FCH76N60N

Fabricant:

Forfait:

TO-247

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Description:

POWER FIELD-EFFECT TRANSISTOR, 7

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En stock : 3663

Minimum: 1 Multiples: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	12385 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	285 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	36mOhm @ 38A, 10V
Supplier Device Package	TO-247
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	SupreMOS™
Power Dissipation (Max)	543W (Tc)
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	76A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk