CDM22010-650 SL

Central Semiconductor Corp

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CDM22010-650 SL

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Forfait:

TO-220-3

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Description:

MOSFET N-CH 650V 10A TO220

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En stock : 464

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1168 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	1Ohm @ 5A, 10V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	2W (Ta), 156W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Mfr	Central Semiconductor Corp
Vgs (Max)	30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	CDM22010