CDBJSC5650-G
detaildesc

CDBJSC5650-G

Comchip Technology

Produit non:

CDBJSC5650-G

Forfait:

TO-220F

Lot:

-

Fiche technique:

pdf

Description:

DIODE SIL CARBIDE 650V 5A TO220F

Quantité:

Livraison:

1.webp 4.webp 5.webp 2.webp 3.webp

Paiement:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

En stock : 453

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

  • 1

    $2.5935

    $2.5935

  • 10

    $2.1774

    $21.774

  • 100

    $1.76168

    $176.168

  • 500

    $1.565904

    $782.952

  • 1000

    $1.340802

    $1340.802

  • 2000

    $1.262512

    $2525.024

  • 5000

    $1.21125

    $6056.25

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Information sur le produit

Paramètre Info

Guide de l'utilisateur

Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Capacitance @ Vr, F 430pF @ 0V, 1MHz
Mounting Type Through Hole
Product Status Active
Supplier Device Package TO-220F
Current - Reverse Leakage @ Vr 100 µA @ 650 V
Series -
Package / Case TO-220-2 Full Pack
Technology SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 5 A
Mfr Comchip Technology
Voltage - DC Reverse (Vr) (Max) 650 V
Package Tube
Current - Average Rectified (Io) 5A
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number CDBJSC5650