BUK662R5-30C,118

NXP Semiconductors

Produit non:

BUK662R5-30C,118

Fabricant:

Forfait:

D2PAK

Lot:

Fiche technique:

Description:

NEXPERIA BUK662R5-30C - 100A, 30

Quantité:

Livraison:

Paiement:

En stock : 927

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	6960 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	114 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	2.8mOhm @ 25A, 10V
Supplier Device Package	D2PAK
Vgs(th) (Max) @ Id	2.8V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	Automotive, AEC-Q101, TrenchMOS™
Power Dissipation (Max)	204W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	NXP Semiconductors
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk