BSM600D12P3G001

Rohm Semiconductor

Produit non:

BSM600D12P3G001

Fabricant:

Forfait:

Module

Lot:

Fiche technique:

Description:

1200V, 576A, HALF BRIDGE, FULL S

Quantité:

Livraison:

Paiement:

En stock : 1

Minimum: 1 Multiples: 1

Qté

Prix unitaire

Prix Ext

Pas le prix que vous voulez? Envoyez RFQ maintenant et nous vous contacterons dès que possible.

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	31000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Chassis Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	-
Supplier Device Package	Module
Vgs(th) (Max) @ Id	5.6V @ 182mA
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	2450W (Tc)
Current - Continuous Drain (Id) @ 25°C	600A (Tc)
Mfr	Rohm Semiconductor
Package	Bulk
Base Product Number	BSM600