AS2312

ANBON SEMICONDUCTOR (INT'L) LIMITED

Produit non:

AS2312

Fabricant:

Forfait:

SOT-23

Lot:

Fiche technique:

Description:

N-CHANNEL ENHANCEMENT MODE MOSFE

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En stock : 31320

Minimum: 1 Multiples: 1

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	888 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.05 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	18mOhm @ 6.8A, 4.5V
Supplier Device Package	SOT-23
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	1.2W (Ta)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	6.8A (Ta)
Mfr	ANBON SEMICONDUCTOR (INT'L) LIMITED
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)