TP65H150LSG
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TP65H150LSG

Transphorm

Producto No:

TP65H150LSG

Fabricante:

Transphorm

Paquete:

3-PQFN (8x8)

Lote:

-

Ficha de datos:

pdf

Descripción:

GANFET N-CH 650V 15A 3PQFN

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 576 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 7.1 nC @ 10 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
Supplier Device Package 3-PQFN (8x8)
Vgs(th) (Max) @ Id 4.8V @ 500µA
Drain to Source Voltage (Vdss) 650 V
Series -
Power Dissipation (Max) 69W (Tc)
Package / Case 3-PowerDFN
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Mfr Transphorm
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube