SQD40P10-40L_GE3
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SQD40P10-40L_GE3

Vishay Siliconix

Producto No:

SQD40P10-40L_GE3

Fabricante:

Vishay Siliconix

Paquete:

TO-252AA

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET P-CH 100V 38A TO252AA

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5540 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 144 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 40mOhm @ 8.2A, 10V
Supplier Device Package TO-252AA
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 100 V
Series Automotive, AEC-Q101, TrenchFET®
Power Dissipation (Max) 136W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQD40