2N6661JTVP02
Vishay Siliconix
Producto No:
2N6661JTVP02
Fabricante:
Paquete:
TO-39
Lote:
-
Ficha de datos:
Descripción:
MOSFET N-CH 90V 860MA TO39
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| FET Type | N-Channel |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| Supplier Device Package | TO-39 |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain to Source Voltage (Vdss) | 90 V |
| Series | - |
| Power Dissipation (Max) | 725mW (Ta), 6.25W (Tc) |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Package | Tube |
| Base Product Number | 2N6661 |
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