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SQ3418AEEV-T1_GE3
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SQ3418AEEV-T1_GE3

Vishay Siliconix

Producto No:

SQ3418AEEV-T1_GE3

Fabricante:

Vishay Siliconix

Paquete:

6-TSOP

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CHANNEL 30V 7.8A 6TSOP

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 528 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 35mOhm @ 6A, 10V
Supplier Device Package 6-TSOP
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 40 V
Series TrenchFET®
Power Dissipation (Max) 5W (Tc)
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8A
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQ3418