SIRC06DP-T1-GE3
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SIRC06DP-T1-GE3

Vishay Siliconix

Producto No:

SIRC06DP-T1-GE3

Fabricante:

Vishay Siliconix

Paquete:

PowerPAK® SO-8

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 30V 32A/60A PPAK SO8

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds 2455 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 2.7mOhm @ 15A, 10V
Supplier Device Package PowerPAK® SO-8
Vgs(th) (Max) @ Id 2.1V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Series TrenchFET® Gen IV
Power Dissipation (Max) 5W (Ta), 50W (Tc)
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 60A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIRC06