SIRA99DP-T1-GE3

Vishay Siliconix

Producto No:

SIRA99DP-T1-GE3

Fabricante:

Paquete:

PowerPAK® SO-8

Lote:

Ficha de datos:

Descripción:

MOSFET P-CH 30V 47.9A/195A PPAK

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En stock : 10117

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	10955 pF @ 15 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.7mOhm @ 20A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	6.35W (Ta), 104W (Tc)
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	47.9A (Ta), 195A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	+16V, -20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIRA99