SIR122DP-T1-RE3

Vishay Siliconix

Producto No:

SIR122DP-T1-RE3

Fabricante:

Paquete:

PowerPAK® SO-8

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Descripción:

MOSFET N-CH 80V 16.7A/59.6A PPAK

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En stock : 15561

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1950 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	7.4mOhm @ 10A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	3.8V @ 250µA
Drain to Source Voltage (Vdss)	80 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	5.2W (Ta), 65.7W (Tc)
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	16.7A (Ta), 59.6A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIR122