SIHP22N60EF-GE3

Vishay Siliconix

Producto No:

SIHP22N60EF-GE3

Fabricante:

Paquete:

TO-220 Full Pack

Lote:

Ficha de datos:

Descripción:

MOSFET N-CH 600V 19A TO220AB

Cantidad:

Entrega:

Pago:

En stock : 3

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1423 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	96 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	182mOhm @ 11A, 10V
Supplier Device Package	TO-220 Full Pack
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Series	EF
Power Dissipation (Max)	179W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHP22