SIHG33N65EF-GE3
Vishay Siliconix
Producto No:
SIHG33N65EF-GE3
Fabricante:
Paquete:
TO-247AC
Lote:
-
Ficha de datos:
Descripción:
MOSFET N-CH 650V 31.6A TO247AC
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4026 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 171 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 109mOhm @ 16.5A, 10V |
| Supplier Device Package | TO-247AC |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain to Source Voltage (Vdss) | 650 V |
| Series | - |
| Power Dissipation (Max) | 313W (Tc) |
| Package / Case | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 31.6A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | SIHG33 |
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