SIHF18N50C-E3
detaildesc

SIHF18N50C-E3

Vishay Siliconix

Producto No:

SIHF18N50C-E3

Fabricante:

Vishay Siliconix

Paquete:

TO-220-3

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 500V 18A TO220-3

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2942 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Mounting Type Through Hole
Product Status Obsolete
Rds On (Max) @ Id, Vgs 270mOhm @ 10A, 10V
Supplier Device Package TO-220-3
Vgs(th) (Max) @ Id 5V @ 250µA
Drain to Source Voltage (Vdss) 500 V
Series -
Power Dissipation (Max) 38W (Tc)
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk
Base Product Number SIHF18