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SIA425EDJ-T1-GE3
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SIA425EDJ-T1-GE3

Vishay Siliconix

Producto No:

SIA425EDJ-T1-GE3

Fabricante:

Vishay Siliconix

Paquete:

PowerPAK® SC-70-6

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET P-CH 20V 4.5A PPAK SC70-6

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 60mOhm @ 4.2A, 4.5V
Supplier Device Package PowerPAK® SC-70-6
Vgs(th) (Max) @ Id 1V @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series TrenchFET®
Power Dissipation (Max) 2.9W (Ta), 15.6W (Tc)
Package / Case PowerPAK® SC-70-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SIA425