SI8469DB-T2-E1
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SI8469DB-T2-E1

Vishay Siliconix

Producto No:

SI8469DB-T2-E1

Fabricante:

Vishay Siliconix

Paquete:

4-Microfoot

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET P-CH 8V 4.6A 4MICROFOOT

Cantidad:

Entrega:

1.webp 4.webp 5.webp 2.webp 3.webp

Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 4 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 64mOhm @ 1.5A, 4.5V
Supplier Device Package 4-Microfoot
Vgs(th) (Max) @ Id 800mV @ 250µA
Drain to Source Voltage (Vdss) 8 V
Series TrenchFET®
Power Dissipation (Max) 780mW (Ta), 1.8W (Tc)
Package / Case 4-UFBGA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±5V
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Package Tape & Reel (TR)
Base Product Number SI8469