SI8425DB-T1-E1
Vishay Siliconix
Producto No:
SI8425DB-T1-E1
Fabricante:
Paquete:
4-WLCSP (1.6x1.6)
Lote:
-
Ficha de datos:
Descripción:
MOSFET P-CH 20V 4WLCSP
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 2A, 4.5V |
| Supplier Device Package | 4-WLCSP (1.6x1.6) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Drain to Source Voltage (Vdss) | 20 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
| Package / Case | 4-UFBGA, WLCSP |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±10V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI8425 |
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