SI8410DB-T2-E1
Vishay Siliconix
Producto No:
SI8410DB-T2-E1
Fabricante:
Paquete:
4-Micro Foot (1x1)
Lote:
-
Ficha de datos:
Descripción:
MOSFET N-CH 20V 4MICRO FOOT
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 8 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 1.5A, 4.5V |
| Supplier Device Package | 4-Micro Foot (1x1) |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Drain to Source Voltage (Vdss) | 20 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
| Package / Case | 4-UFBGA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±8V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI8410 |
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