SI4848BDY-T1-GE3

Vishay Siliconix

Producto No:

SI4848BDY-T1-GE3

Fabricante:

Paquete:

8-SOIC

Lote:

Ficha de datos:

Descripción:

N-CHANNEL 150-V (D-S) MOSFET SO-

Cantidad:

Entrega:

Pago:

En stock : 50

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 75 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	157mOhm @ 10A, 10V
Supplier Device Package	8-SOIC
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	150 V
Series	TrenchFET®
Power Dissipation (Max)	2.5W (Ta), 4.5W (Tc)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.7A (Ta), 5A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI4848