SI4459BDY-T1-GE3

Vishay Siliconix

Producto No:

SI4459BDY-T1-GE3

Fabricante:

Paquete:

8-SO

Lote:

Ficha de datos:

Descripción:

MOSFET P-CH 30V 20.5A/27.8A 8SO

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Pago:

En stock : 11268

Mínimo: 1 Múltiplos: 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3490 pF @ 15 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	84 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	4.9mOhm @ 15A, 10V
Supplier Device Package	8-SO
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchFET® Gen IV
Power Dissipation (Max)	3.1W (Ta), 5.6W (Tc)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20.5A (Ta), 27.8A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI4459