SI4190DY-T1-GE3
Vishay Siliconix
Producto No:
SI4190DY-T1-GE3
Fabricante:
Paquete:
8-SOIC
Lote:
-
Ficha de datos:
Descripción:
MOSFET N-CH 100V 20A 8-SOIC
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 15A, 10V |
| Supplier Device Package | 8-SOIC |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Mfr | Vishay Siliconix |
| Package | Cut Tape (CT) |
| Base Product Number | SI4190 |
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