SI3812DV-T1-GE3
Vishay Siliconix
Producto No:
SI3812DV-T1-GE3
Fabricante:
Paquete:
6-TSOP
Lote:
-
Ficha de datos:
Descripción:
MOSFET N-CH 20V 2A 6TSOP
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
| Supplier Device Package | 6-TSOP |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Drain to Source Voltage (Vdss) | 20 V |
| Series | LITTLE FOOT® |
| Power Dissipation (Max) | 830mW (Ta) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±12V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI3812 |
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