SI1067X-T1-GE3
detaildesc

SI1067X-T1-GE3

Vishay Siliconix

Producto No:

SI1067X-T1-GE3

Fabricante:

Vishay Siliconix

Paquete:

SC-89 (SOT-563F)

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET P-CH 20V 1.06A SC89-6

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 375 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 150mOhm @ 1.06A, 4.5V
Supplier Device Package SC-89 (SOT-563F)
Vgs(th) (Max) @ Id 950mV @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series TrenchFET®
Power Dissipation (Max) 236mW (Ta)
Package / Case SOT-563, SOT-666
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.06A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI1067