SI1012X-T1-E3
detaildesc

SI1012X-T1-E3

Vishay Siliconix

Producto No:

SI1012X-T1-E3

Fabricante:

Vishay Siliconix

Paquete:

SC-89-3

Lote:

-

Ficha de datos:

pdf

Descripción:

MOSFET N-CH 20V 500MA SC89-3

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 0.75 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 700mOhm @ 600mA, 4.5V
Supplier Device Package SC-89-3
Vgs(th) (Max) @ Id 900mV @ 250µA
Drain to Source Voltage (Vdss) 20 V
Series TrenchFET®
Power Dissipation (Max) 250mW (Ta)
Package / Case SC-89, SOT-490
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±6V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SI1012