SI1011X-T1-GE3
Vishay Siliconix
Producto No:
SI1011X-T1-GE3
Fabricante:
Paquete:
SC-89-3
Lote:
-
Ficha de datos:
Descripción:
MOSFET P-CH 12V SC89-3
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 62 pF @ 6 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 640mOhm @ 400mA, 4.5V |
| Supplier Device Package | SC-89-3 |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Drain to Source Voltage (Vdss) | 12 V |
| Series | TrenchFET® |
| Power Dissipation (Max) | 190mW (Ta) |
| Package / Case | SC-89, SOT-490 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 480mA (Ta) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±5V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | SI1011 |
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