PMK30EP518
NXP USA Inc.
Producto No:
PMK30EP518
Fabricante:
Paquete:
8-SO
Lote:
-
Ficha de datos:
Descripción:
P-CHANNEL POWER MOSFET
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2240 pF @ 25 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 9.2A, 10V |
| Supplier Device Package | 8-SO |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | TrenchMOS™ |
| Power Dissipation (Max) | 6.9W (Tc) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 14.9A (Tc) |
| Mfr | NXP USA Inc. |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
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