BUK652R1-30C,127
NXP USA Inc.
Producto No:
BUK652R1-30C,127
Fabricante:
Paquete:
TO-220AB
Lote:
-
Ficha de datos:
-
Descripción:
MOSFET N-CH 30V 120A TO220AB
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 10918 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 168 nC @ 10 V |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 25A, 10V |
| Supplier Device Package | TO-220AB |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | TrenchMOS™ |
| Power Dissipation (Max) | 263W (Tc) |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Mfr | NXP USA Inc. |
| Vgs (Max) | ±16V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tube |
| Base Product Number | BUK65 |
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