G3S06508J
Global Power Technology-GPT
Producto No:
G3S06508J
Fabricante:
Paquete:
TO-220ISO
Lote:
-
Ficha de datos:
Descripción:
DIODE SIL CARB 650V 23A TO220ISO
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | TO-220ISO |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Series | - |
| Package / Case | TO-220-2 Isolated Tab |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Mfr | Global Power Technology-GPT |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Cut Tape (CT) |
| Current - Average Rectified (Io) | 23A |
| Operating Temperature - Junction | -55°C ~ 175°C |
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