G3S06504C
Global Power Technology-GPT
Producto No:
G3S06504C
Fabricante:
Paquete:
TO-252
Lote:
-
Ficha de datos:
Descripción:
DIODE SIL CARB 650V 11.5A TO252
Cantidad:
Entrega:
Pago:
En stock : 30
Mínimo: 1 Múltiplos: 1
Qty
Precio unitario
Precio Ext
1
$2.869
$2.869
10
$2.41205
$24.1205
100
$1.951585
$195.1585
500
$1.734776
$867.388
1000
$1.485401
$1485.401
2000
$1.398666
$2797.332
5000
$1.341875
$6709.375
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Información del producto
Parámetro Info
Guía del usuario
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | 181pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | TO-252 |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Series | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Mfr | Global Power Technology-GPT |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Bulk |
| Current - Average Rectified (Io) | 11.5A |
| Operating Temperature - Junction | -55°C ~ 175°C |
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2800+Fabricantes mundiales
15,000 ㎡Almacén en stock
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