EPC2016
EPC
Producto No:
EPC2016
Fabricante:
Paquete:
Die
Lote:
-
Ficha de datos:
Descripción:
GANFET N-CH 100V 11A DIE
Cantidad:
Entrega:
Pago:
En stock : Por favor investigación
Por favor envíe RFQ, responderemos inmediatamente.
Información del producto
Parámetro Info
Guía del usuario
| Operating Temperature | -40°C ~ 125°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V |
| Mounting Type | Surface Mount |
| Product Status | Discontinued at Digi-Key |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 11A, 5V |
| Supplier Device Package | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | eGaN® |
| Power Dissipation (Max) | - |
| Package / Case | Die |
| Technology | GaNFET (Gallium Nitride) |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Mfr | EPC |
| Vgs (Max) | +6V, -5V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Package | Tape & Reel (TR) |
| Base Product Number | EPC20 |
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2000+Volumen de RFQ promedio diario
30,000,000Unidad de producto estándar
2800+Fabricantes mundiales
15,000 ㎡Almacén en stock
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